A method to study uniformity of electrophysical properties of high-resistance CdZnTe crystals

Uniformity of properties of a semiconductor material is one of the important conditions to achieve high spectrometric performance of ionizing radiation detectors. To study uniformity of electrophysical properties of crystals, an original method for acquisition of distributions of local values of a d...

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Bibliographic Details
Published in:	IEEE transactions on nuclear science Vol. 52; no. 5; pp. 1945 - 1950
Main Authors:	Komar, V.K., Chugai, O.N., Abashin, S.L., Nalivaiko, D.P., Puzikov, V.M., Sulima, S.V.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-10-2005 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Bridgman method Cadmium zinc tellurides CdZnTe Crystals Detectors Dielectric loss Dielectric losses dielectric measurements Electrodes electrophysical properties infrared imaging Ionizing radiation Irregularities Permittivity Radiation detectors Semiconductor materials Semiconductor radiation detectors Semiconductors Spectroscopy Tellurium Variability Zinc
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