Thermal Distortion of an X-Ray Mask for Synchrotron Radiation Lithography

• Published in: Japanese Journal of Applied Physics Vol. 37; no. 12S; p. 6804
• Main Authors: Yang, Jinfeng, Toyota, Eijiro, Kawachi, Shunichi
• Format: Journal Article
• Language: English
• Published: 01-12-1998
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.37.6804

A thermal model is developed to calculate the temperature rise in scanning exposure
of synchrotron radiation lithography. The maximum temperature rise on a mask
membrane is 1°C in the scanning exposure under the given X-ray beam conditions. The
behavior of the thermal distortion of the mask has been described in the scanning
exposure. The thermal distortion is found to be smaller than 5.7 nm in the
x
-direction and
12.7 nm (from +8.2 nm to -4.5 nm) in the
y
-direction from the beginning to the end of the
exposure.