Electrical and structural properties of pulse laser-annealed polycrystalline silicon films

• Published in: IEEE transactions on electron devices Vol. 30; no. 7; pp. 737 - 744
• Main Authors: Cox, T.I., Deshmukh, V.G.I., Hill, J.R., Webber, H.C., Chew, N.G., Cullis, A.G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-07-1983; Institute of Electrical and Electronics Engineers
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Ion implantation; Electrical conductivity; Semiconductor materials; Hall mobility; Epitaxy; Experimental study; Doping profile; Chemical vapor deposition; Thin film; Characterization; Transmission electron microscopy; Laser beam; Recrystallization; Silicon; Microstructure
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1983.21203

Doped epitaxial films of Si on single-crystal high-resistivity Si substrates have been prepared using ion implantation and Q-switched ruby laser annealing of LPCVD polycrystalline Si layers. Films, doped with B or As in the range 10 17 to 5 × 10 20 cm -3 were studied by the measurement of their resistivities, Hall mobilities, and doping density profiles. The good film quality achieved permitted the fabrication of p-channel MOS transistors which, through measurements of threshold voltage and transconductance, yielded additional data on the surface mobility and the integrity of the Si-SiO 2 interface. The electrical properties of the films compared favorably with those of similarly doped single-crystal material, and transmission electron microscopy was used to confirm the good structural quality of the epitaxial growth.