Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode

• Published in: IEEE electron device letters Vol. 28; no. 2; pp. 154 - 156
• Main Authors: Yu, H.Y., Lauwers, A., Demeurisse, C., Richard, O., Mertens, S., Opsomer, K., Singanamalla, R., Rosseel, E., Absil, P., Biesemans, S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-02-2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Channels; Degradation; Devices; Dielectric devices; Dielectric materials; Dielectric measurements; Dielectrics; Electrical properties; Electrodes; Electronics; Exact sciences and technology; Fully silicide (FUSI); Gates; Inorganic materials; Integrity; Interface states; Metals industry; MOSFETs; NiSi:Yb; nMOSFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicides; Silicon oxynitride; Transistors; Field effect transistor; Interface state; MOSFET; Long channel; nMOSFETs; NiSi:Yb; Fully silicide (FUSI); NMOS technology; Electrical characteristic; Damaging
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2006.889259

In this letter, nMOSFETs using a NiSi:Yb fully silicide (FUSI) electrode are demonstrated for the first time. We report that the integration of NiSi:Yb FUSI into our reference n-FETs with the respective SiON / HfSiON gate dielectrics results in a V t reduction from 0.55/0.52 down to 0.30/0.43 V, without degradation of the gate dielectric integrity, channel interface states, and long channel device mobility