SAM: A new GHz sampling ASIC for the H.E.S.S.-II front-end electronics
The H.E.S.S.-II front-end electronics, with its 20 GeV energy threshold, will require a much higher acquisition rate capability and a larger dynamic range than was relevant for H.E.S.S.-I. These constraints led to the development of a new ASIC, called SAM for Swift Analogue Memory, to replace the AR...
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Published in: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 567; no. 1; pp. 21 - 26 |
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Main Authors: | , , , , , |
Format: | Journal Article Conference Proceeding |
Language: | English |
Published: |
Elsevier B.V
01-11-2006
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | The H.E.S.S.-II front-end electronics, with its 20
GeV energy threshold, will require a much higher acquisition rate capability and a larger dynamic range than was relevant for H.E.S.S.-I. These constraints led to the development of a new ASIC, called SAM for Swift Analogue Memory, to replace the ARS used for H.E.S.S.-I. The SAM chip features 2 channels for the low and high gain outputs of a PMT, each channel having a depth of 256 analogue memory cells. The sampling frequency is adjustable from 0.7 up to 2
GS/s and the read-out time for one event is decreased from 275 down to 2.3
μs. The SAM input bandwidth and dynamic range are increased up to 300
MHz and more than 11 bits, respectively. |
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ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/j.nima.2006.05.052 |