Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer

• Published in: Applied physics letters Vol. 91; no. 19; pp. 191905 - 191905-3
• Main Authors: Kobayashi, Atsushi, Kawano, Satoshi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 05-11-2007
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2809361

Nonpolar
a
-plane GaN films were grown on nearly lattice-matched
a
-plane ZnO substrates by pulsed laser deposition. Growth of GaN on
a
-plane ZnO at conventional growth temperatures (around
700
°
C
) resulted in the formation of polycrystalline materials, probably due to the interface reactions between GaN and ZnO. However, single crystalline
a
-plane GaN with an atomically flat surface can be grown on ZnO at room temperature in the layer-by-layer mode. X-ray diffraction and photoluminescence measurements revealed that high-quality
a
-plane GaN films can also be grown at elevated substrate temperatures (up to
700
°
C
) by using a RT
a
-plane GaN film as a buffer layer.