Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

•We provide an ARPES comparison between the three tellurohalides BiTeX (X=I, Br, Cl).•They present a similar band structure with namely spin-split bulk and surface states.•They offer, except for BiTeCl, the possibility of ambipolar conduction.•They can be easily doped.•From the data appeared so far,...

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Published in:Journal of electron spectroscopy and related phenomena Vol. 201; no. C; pp. 115 - 120
Main Authors: Moreschini, L., Autès, G., Crepaldi, A., Moser, S., Johannsen, J.C., Kim, K.S., Berger, H., Bugnon, Ph, Magrez, A., Denlinger, J., Rotenberg, E., Bostwick, A., Yazyev, O.V., Grioni, M.
Format: Journal Article
Language:English
Published: Netherlands Elsevier B.V 01-05-2015
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Abstract •We provide an ARPES comparison between the three tellurohalides BiTeX (X=I, Br, Cl).•They present a similar band structure with namely spin-split bulk and surface states.•They offer, except for BiTeCl, the possibility of ambipolar conduction.•They can be easily doped.•From the data appeared so far, BiTeBr may be the most appealing for applications. We present an overview of the new family of semiconductors BiTeX (X=I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.
AbstractList •We provide an ARPES comparison between the three tellurohalides BiTeX (X=I, Br, Cl).•They present a similar band structure with namely spin-split bulk and surface states.•They offer, except for BiTeCl, the possibility of ambipolar conduction.•They can be easily doped.•From the data appeared so far, BiTeBr may be the most appealing for applications. We present an overview of the new family of semiconductors BiTeX (X=I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work.
Author Denlinger, J.
Rotenberg, E.
Kim, K.S.
Bugnon, Ph
Autès, G.
Johannsen, J.C.
Bostwick, A.
Berger, H.
Moser, S.
Yazyev, O.V.
Crepaldi, A.
Grioni, M.
Magrez, A.
Moreschini, L.
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  surname: Moreschini
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  surname: Autès
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  organization: Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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  surname: Crepaldi
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  surname: Moser
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  surname: Johannsen
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  organization: Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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  surname: Kim
  fullname: Kim, K.S.
  organization: Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
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  surname: Berger
  fullname: Berger, H.
  organization: Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
– sequence: 8
  givenname: Ph
  surname: Bugnon
  fullname: Bugnon, Ph
  organization: Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
– sequence: 9
  givenname: A.
  surname: Magrez
  fullname: Magrez, A.
  organization: Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
– sequence: 10
  givenname: J.
  surname: Denlinger
  fullname: Denlinger, J.
  organization: Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
– sequence: 11
  givenname: E.
  surname: Rotenberg
  fullname: Rotenberg, E.
  organization: Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
– sequence: 12
  givenname: A.
  surname: Bostwick
  fullname: Bostwick, A.
  organization: Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
– sequence: 13
  givenname: O.V.
  surname: Yazyev
  fullname: Yazyev, O.V.
  organization: Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
– sequence: 14
  givenname: M.
  surname: Grioni
  fullname: Grioni, M.
  organization: Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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Issue C
Keywords Angle-resolved photoemission
Spin–orbit splitting
Tellurohalides
Rashba states
Language English
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Snippet •We provide an ARPES comparison between the three tellurohalides BiTeX (X=I, Br, Cl).•They present a similar band structure with namely spin-split bulk and...
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SubjectTerms Angle-resolved photoemission
Rashba states
Spin–orbit splitting
Tellurohalides
Title Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)
URI https://dx.doi.org/10.1016/j.elspec.2014.11.004
https://www.osti.gov/biblio/1249751
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