Ferroelectric yttrium doped hafnium oxide films from all-inorganic aqueous precursor solution

• Published in: Ceramics international Vol. 44; no. 12; pp. 13867 - 13872
• Main Authors: Wang, Xuexia, Zhou, Dayu, Li, Shuaidong, Liu, Xiaohua, Zhao, Peng, Sun, Nana, Ali, Faizan, Wang, Jingjing
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 15-08-2018
• Subjects: A. Films; B. X-ray methods; C. Ferroelectric properties; E. Capacitors; B. X-ray methods; C. Ferroelectric properties; A. Films; E. Capacitors
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2018.04.233

We report a unique aqueous solution deposition method to prepare yttrium doped hafnium oxide (Y:HfO2) thin films using all-inorganic reagents. The composition and chemical bonding features of the films were investigated using X-ray photoelectron spectroscopy. The Y:HfO2 film was integrated into metal-insulator-semiconductor (MIS) structure capacitors for electrical measurements. A transition of the polarization behavior from apparent ferroelectric-type to linear dielectric-type was observed for films with thickness increasing from 25 nm to 80 nm, which is correlated to the dominant crystal structure change from high-symmetry phase to monoclinic phase evidenced by grazing incidence X-ray diffraction analysis.