Non-equilibrium Microstructure and Thermal Stability of Plasma-sprayed Al–Si Coatings

A splat-quenched, thick Al–Si deposit was manufactured by low-pressure plasma spraying (LPPS) and investigated in terms of microstructural inhomogeneity, Si solid solubility in α–Al, formation of metastable phases, and thermal stability. The LPPS Al–Si deposit had an inhomogeneous, layered microstru...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials research Vol. 20; no. 8; pp. 2038 - 2045
Main Authors: Baik, K.H., Seok, H.K., Kim, H.S., Grant, P.S.
Format: Journal Article
Language:English
Published: New York, USA Cambridge University Press 01-08-2005
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A splat-quenched, thick Al–Si deposit was manufactured by low-pressure plasma spraying (LPPS) and investigated in terms of microstructural inhomogeneity, Si solid solubility in α–Al, formation of metastable phases, and thermal stability. The LPPS Al–Si deposit had an inhomogeneous, layered microstructure consisting of splat-quenched lamellae and the incorporation of unmelted or partially melted particles. The splat-quenched Al–Si lamellae were formed by deposition of a fully liquid droplet and had an almost featureless microstructure at relatively low magnifications. There was a significant reduction in the α–Al lattice parameter in the LPPS Al–Si deposit because of extended Si solubility in the α–Al matrix. Transmission electron microscopy investigations showed that the splat quenching of liquid Al–Si droplet led to (i) columnar grain growth of α–Al(Si), (ii) formation of nano-sized Si precipitates in the Al matrix which was supersaturated with Si; and (iii) formation of amorphous Si phase embedded in the crystalline Al matrix. On reheating, the amorphous Si transformed into fine crystalline Si by interdiffusion of Al and Si atoms. Simultaneously, Si precipitation occurred in the supersaturated α–Al matrix. The overall activation energy for the Si crystallization/precipitation was estimated as ∼81 kJ/mol from a modified Kissinger analysis.
Bibliography:ark:/67375/6GQ-8XB6M2Z5-6
istex:E372BA8EFB9C091F7B62F5EC2752CE2DAC5C26E2
ArticleID:08946
PII:S0884291400089469
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0884-2914
2044-5326
DOI:10.1557/JMR.2005.0249