Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 43; no. 1; pp. 91 - 95
Main Authors: Bae, Mi-Suk, Ji, Hee-Hwan, Lee, Hun-Jin, Oh, Soon-Young, Huang, Bin-Feng, Yun, Jang-Gn, Wang, Jin-Suk, Park, Seong-Hyung, Lee, Hi-Deok
Format: Journal Article
Language:English
Published: 01-01-2004
Online Access:Get full text
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Description
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.91