Plasma generation in silicon-based inductive grid arrays

Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.

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Published in:Optics and lasers in engineering Vol. 47; no. 11; pp. 1195 - 1198
Main Authors: Kontogeorgos, A.A., Korfiatis, D.P., Thoma, K.A.Th, Vardaxoglou, J.C.
Format: Journal Article
Language:English
Published: Kidlington Elsevier Ltd 01-11-2009
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Abstract Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.
AbstractList Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.
Author Kontogeorgos, A.A.
Vardaxoglou, J.C.
Thoma, K.A.Th
Korfiatis, D.P.
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  organization: Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK
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  givenname: D.P.
  surname: Korfiatis
  fullname: Korfiatis, D.P.
  email: korfiat@physics.upatras.gr
  organization: Physics Department, University of Patras, Rio, Patras, Hellas, Greece
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  givenname: K.A.Th
  surname: Thoma
  fullname: Thoma, K.A.Th
  organization: Physics Department, University of Patras, Rio, Patras, Hellas, Greece
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  givenname: J.C.
  surname: Vardaxoglou
  fullname: Vardaxoglou, J.C.
  organization: Department of Electronic and Electrical Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU, UK
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Cites_doi 10.1002/mop.20622
10.1049/el:20030570
10.1109/LMWC.2005.855372
10.1109/TAP.2004.838795
10.1002/mop.11188
10.1049/el:19961557
10.1109/22.775484
10.1109/JLT.2006.872284
10.1088/0022-3727/40/21/047
10.1002/mop.21232
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Issue 11
Keywords Grid arrays
Electron–hole plasma
Optical control of microwaves
Electron hole plasma
Microwave radiation
Laser-produced plasma
Theoretical study
Numerical method
Silicon
Electron-hole plasma
Language English
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Snippet Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of...
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SubjectTerms Electron–hole plasma
Exact sciences and technology
Grid arrays
Optical control of microwaves
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma production and heating
Plasma production and heating by laser beams
Title Plasma generation in silicon-based inductive grid arrays
URI https://dx.doi.org/10.1016/j.optlaseng.2009.06.006
https://search.proquest.com/docview/34902600
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