Plasma generation in silicon-based inductive grid arrays

Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.

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Bibliographic Details
Published in:	Optics and lasers in engineering Vol. 47; no. 11; pp. 1195 - 1198
Main Authors:	Kontogeorgos, A.A., Korfiatis, D.P., Thoma, K.A.Th, Vardaxoglou, J.C.
Format:	Journal Article
Language:	English
Published:	Kidlington Elsevier Ltd 01-11-2009 Elsevier
Subjects:	Electron–hole plasma Exact sciences and technology Grid arrays Optical control of microwaves Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma production and heating Plasma production and heating by laser beams Grid arrays Electron–hole plasma Optical control of microwaves Electron hole plasma Microwave radiation Laser-produced plasma Theoretical study Numerical method Silicon Electron-hole plasma
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Description
Summary:	Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0143-8166 1873-0302
DOI:	10.1016/j.optlaseng.2009.06.006