Reflectance Measurements of Annealed Porous Silicon Implanted with Nitrogen by Plasma Immersion Ion Implantation

• Published in: Physica status solidi. B. Basic research Vol. 232; no. 1; pp. 111 - 115
• Main Authors: Beloto, A.F., Silva, M.D., Senna, J.R., Kuranaga, C., Leite, N.F., Ueda, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01-07-2002; WILEY‐VCH Verlag Berlin GmbH; Wiley
• Subjects: 61.43.Gt; 61.72.Tt; 78.40.Fy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Disordered solids; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Powders, porous materials; Semiconductors; Structure of solids and liquids; crystallography; Visible and ultraviolet spectra; Ion implantation; Annealing; Inorganic compounds; Porous materials; Photoluminescence; Ultraviolet spectra; Binary compounds; Etching; Immersion; Monocrystals; Ultraviolet radiation; Reflection spectrum; Anodizing; Silicon oxides; Silicon nitrides; Silicon; Reflectance
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/1521-3951(200207)232:1<111::AID-PSSB111>3.0.CO;2-L

Porous silicon (PS) samples, approximately 1 μm thick, were obtained from p‐ and n‐type (100) monocrystalline silicon wafers using different anodization conditions and were implanted with nitrogen by plasma immersion ion implantation (PIII). For comparison, polished silicon samples were implanted as well as the PS samples. The effects of implantation and of the compounds formed (SiO2 and Si3N4) on the reflectance were analyzed. Reflectance measurements of the implanted samples were carried out before and after PIII, and after annealing (1000 °C, 30 min in N2) and etching in an 8% (w/w) HF solution for 8 min. After implantation, a reduction of the reflectance in the ultraviolet (UV) region of the spectrum was observed for the polished silicon samples. All the PS samples had strong photoluminescence (PL) before and after PIII and small changes were observed in the reflectance. After annealing, the PS samples showed an increase of the reflectance in the UV region and no PL.