Synthesis of HDLC films from solid carbon

Diamond-like carbon (DLC) films were synthesized on silicon substrates from solid carbon by a very low power (∼60 W) microwave plasma chemical vapor deposition (MPCVD) reaction of a mixture of 90–70% helium and 10–30% hydrogen. It is proposed that He⁺ served as a catalyst with atomic hydrogen to for...

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Bibliographic Details
Published in:Journal of materials science Vol. 39; no. 10; pp. 3309 - 3318
Main Authors: Mills, R. L, Sankar, J, Ray, P, Voigt, A, He, J, Dhandapani, B
Format: Journal Article
Language:English
Published: Heidelberg Kluwer Academic Publishers 15-05-2004
Springer
Springer Nature B.V
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Summary:Diamond-like carbon (DLC) films were synthesized on silicon substrates from solid carbon by a very low power (∼60 W) microwave plasma chemical vapor deposition (MPCVD) reaction of a mixture of 90–70% helium and 10–30% hydrogen. It is proposed that He⁺ served as a catalyst with atomic hydrogen to form an energetic plasma. The average hydrogen atom temperature of a helium-hydrogen plasma was measured to be up to 180–210 eV versus ≈3 eV for pure hydrogen. Bombardment of the carbon surface by highly energetic hydrogen formed by the catalysis reaction may play a role in the formation of DLC. The films were characterized by time of flight secondary ion mass spectroscopy (ToF-SIMS), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. TOF-SIMS identified the coatings as hydride by the large H⁺ peak in the positive spectrum and the dominant H⁻ in the negative spectrum. The XPS identification of the H content of the CH coatings as a novel hydride corresponding to a peak at 49 eV has implications that the mechanism of the DLC formation may also involve one or both of selective etching of graphitic carbon and the stabilization of sp ³-bonded carbon by the hydrogen catalysis product. Thus, a novel H intermediate formed by the plasma catalysis reaction may enhance the stabilization and etching role of H used in past methods.
Bibliography:http://dx.doi.org/10.1023/B:JMSC.0000026931.98685.59
ObjectType-Article-2
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ISSN:0022-2461
1573-4803
DOI:10.1023/B:JMSC.0000026931.98685.59