Nitride-MBE system for in situ synchrotron X-ray measurements

• Published in: Japanese Journal of Applied Physics Vol. 55; no. 5S; pp. 5 - 10
• Main Authors: Sasaki, Takuo, Ishikawa, Fumitaro, Yamaguchi, Tomohiro, Takahasi, Masamitu
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01-05-2016
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.55.05FB05

A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber has two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-ray measurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy were presented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situ measurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitride semiconductors.