Spontaneous formation of GaN nanostructures by molecular beam epitaxy

We have identified crystal growth conditions in plasma-assisted molecular beam epitaxy (PAMBE) that leads to spontaneous formation of GaN nanostructure like nanowalls, nanotubes, and nanorods on c-plane sapphire. We have grown GaN on c-plane Al 2O 3 substrate at temperatures 630, 680 and 780 °C. The...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 326; no. 1; pp. 191 - 194
Main Authors:	Kesaria, Manoj, Shetty, Satish, Shivaprasad, S.M.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-07-2011 Elsevier
Subjects:	A1. Nanorods A1. Nanostructures A3. Molecular beam epitaxy B1. GaN B2. Semiconducting III-V materials B3. Light emitting diodes Cross-disciplinary physics: materials science; rheology Diffraction Exact sciences and technology Gallium nitrides Materials science Methods of crystal growth; physics of crystal growth Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Morphology Nanocomposites Nanomaterials Nanorods Nanoscale materials and structures: fabrication and characterization Nanostructure Nanotubes Other topics in nanoscale materials and structures Physics Spontaneous Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation A1. Nanorods B3. Light emitting diodes B1. GaN A3. Molecular beam epitaxy B2. Semiconducting III-V materials A1. Nanostructures Crystal growth Catalysts Growth rate Nanotubes Photoluminescence Plasma assisted processing Field emission Iron XRD Nanostructures RHEED Gallium nitride Stress relaxation Optical properties Molecular beam epitaxy Nanorod Nanomaterial synthesis Buffer layer High-frequency discharges Temperature dependence Scanning electron microscopy Light emitting diodes Optoelectronic devices III-V compound Operating conditions Self-assembly Morphology Growth mechanism X ray diffractometry Nanostructured materials Nanowall III-V semiconductors
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