The Influence of Annealing on Current-Voltage Characteristics of H2SeO3 Treated Al-nGaAs Schottky Contact

• Published in: Physica status solidi. A, Applied research Vol. 180; no. 2; pp. 499 - 505
• Main Authors: Meskinis, S., Slapikas, K., Grigaliunas, V., Matukas, J., Smetona, S.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01-08-2000; WILEY‐VCH Verlag Berlin GmbH; Wiley-VCH
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Surface double layers, schottky barriers, and work functions; Gallium arsenides; Annealing; Inorganic compounds; Semiconductor materials; Schottky barriers; Binary compounds; Surface treatments; 1/f noise; Background noise; Experimental study; Chemical treatment; SEM; Kinetics; Ohmic contacts; Barrier height; Selenium; Microstructure; IV characteristic; Passivation
• ISSN: 0031-8965; 1521-396X
• DOI: 10.1002/1521-396X(200008)180:2<499::AID-PSSA499>3.0.CO;2-M

In this study the annealing effects on current–voltage and low‐frequency noise characteristics of Al–nGaAs Schottky contact were investigated. Selenious acid treatment of GaAs surface prior Al deposition resulted in effective barrier height (φ*b) reduction up to 0.36 eV and to the Ohmic contact formation after annealing above 450 °C. SEM analysis revealed that Se passivation affected both metallisation morphology and interface reaction kinetic during the Al–GaAs anneals. Observed changes of the Schottky contact barrier height, low‐frequency noise and thermostability are explained by the interface Se reactions with both GaAs and Al.