In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 273; no. 3; pp. 381 - 385
• Main Authors: Gao, F., Huang, D.D., Li, J.P., Liu, C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 03-01-2005; Elsevier
• Subjects: A1. Doping; A3. Molecular beam epitaxy; Applied sciences; B1. Germanium silicon alloys; B2. Semiconducting germanium; B2. Semiconducting silicon; B3. Bipolar transistors; Bipolar transistors; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; 85.30.Pq; B2. Semiconducting germanium; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; A1. Doping; B3. Bipolar transistors; 81.15.Hi; 68.55.Ln; 82.80.Ms; B2. Semiconducting silicon; Binary compound; Semiconductor materials; Growth rate; Charge carrier density; Doping; 82.80.Ms Al. Doping; Crystal growth from vapors; Experimental study; Bipolar transistor; Inorganic compound; Silicon Germanides; Molecular beam epitaxy; Silicon; Heterostructures; Heterojunction
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.09.057

N–p–n Si/SiGe/Si heterostructures have been grown by a disilane (Si
2H
6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH
3) and diborane (B
2H
6) as n- and p-type in situ doping sources, respectively. Adopting an in situ doping control technology, the influence of background B dopant on the growth of n–Si emitter layer was reduced, and an abrupt B dopant distribution from SiGe base to Si emitter layer was obtained. Besides, higher n-type doping in the surface region of emitter to reduce the emitter resist can be realized, and it did not result in the drop of growth rate of Si emitter layer in this technology.