Ion-plasma protective coatings of CdTe surface for X- and gamma-ray detectors

Comparative study of I–V characteristics of “metal-semiconductor-metal” structures without coatings and with protective coatings is presented. Regimes for radio frequency deposition of dielectric coatings on the surface of pixeled Schottky junction based on Cl-doped CdTe single crystals with high re...

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Bibliographic Details
Published in:Surface & coatings technology Vol. 202; no. 11; pp. 2509 - 2512
Main Authors: Kleto, G.I., Savchuk, A.I., Tkachuk, P.M., Tkachuk, V.I.
Format: Journal Article Conference Proceeding
Language:English
Published: Lausanne Elsevier B.V 25-02-2008
Elsevier
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Summary:Comparative study of I–V characteristics of “metal-semiconductor-metal” structures without coatings and with protective coatings is presented. Regimes for radio frequency deposition of dielectric coatings on the surface of pixeled Schottky junction based on Cl-doped CdTe single crystals with high resistivity (10 7–10 10) Ω·cm were determined. In particular, the films with composition of (TeO 2) x –(SiO 2) 1 − x have demonstrated high isolation properties. Possible applications of new CdTe pixeled detectors with the studied protective coatings for high resolution spectrometry in X- and gamma-ray sensor devices are discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2007.09.049