On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds

• Published in: Journal of crystal growth Vol. 230; no. 1; pp. 232 - 238
• Main Authors: Talalaev, R.A., Yakovlev, E.V., Karpov, S.Yu, Makarov, Yu.N.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-08-2001
• Subjects: A1. Adsorption; A1. Desorption; A1. Growth models; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; A1. Growth models; B1. Nitrides; B2. Semiconducting III–V materials; 82.20.Wt; A1. Adsorption; A3. Metalorganic vapor phase epitaxy; 81.15.Gh; A1. Desorption; 68.45.Da; 81.05.Ea
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01354-9

Kinetic effects limiting the growth rate in MOVPE of III–V compounds are analyzed. A general mechanism—the blocking of group III species adsorption sites by methyl radicals—is suggested and accounted for in an original model of surface chemistry, using experimental data on the decomposition of group III metal–organic precursors on III–V semiconductor surfaces. The application of the model to GaAs, GaN and InP MOVPE provides a good agreement between the predicted and measured growth rates in a wide range of growth conditions and reactor types.