2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy

Germanium phosphide (GeP), a new member of the Group IV–Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51...

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Bibliographic Details

Published in:	Advanced materials (Weinheim) Vol. 30; no. 14; pp. e1706771 - n/a
Main Authors:	Li, Liang, Wang, Weike, Gong, Penglai, Zhu, Xiangde, Deng, Bei, Shi, Xingqiang, Gao, Guoying, Li, Huiqiao, Zhai, Tianyou
Format:	Journal Article
Language:	English
Published:	Germany Wiley Subscription Services, Inc 01-04-2018
Subjects:	2D materials Anisotropy Flakes GeP in‐plane anisotropy low‐symmetry Phosphides photodetectors Physical properties Resistance photodetectors in-plane anisotropy low-symmetry GeP 2D materials
Online Access:	Get full text
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