Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond

The profiling of the microwave probed photoconductivity transients and of the time resolved photoluminescence spectra has simultaneously been performed on the synthetic diamond wafer samples in order to clarify correlation of the distribution of the grown-in defects and carrier radiative and non-rad...

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Bibliographic Details
Published in:	Diamond and related materials Vol. 47; pp. 15 - 26
Main Authors:	Gaubas, E., Ceponis, T., Jasiunas, A., Kalendra, V., Pavlov, J., Kazuchits, N., Naumchik, E., Rusetsky, M.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-08-2014 Elsevier
Subjects:	Catalysis Catalysts: preparations and properties Channels Chemistry Condensed matter: electronic structure, electrical, magnetic, and optical properties Correlation Cross-disciplinary physics: materials science; rheology Crystal defects Defect characterization Diamond crystal Diamonds Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Fullerenes and related materials; diamonds, graphite General and physical chemistry HTHP Impurities Impurity characterization Materials science Microstructure Nickel Nitrogen atoms Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoconduction and photovoltaic effects; photodielectric effects Photoluminescence Physics Specific materials Synthetic diamond Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry Wafers Diamond crystal Defect characterization Impurity characterization Microstructure HTHP Synthetic diamond Atomic position Non radiative recombination Photoluminescence Precipitate Time resolved spectra Single crystal Absorption spectrum Transients High pressure high temperature method Pressure effect Carrier lifetime Nickel Photoconductivity Catalyst Defect formation Wafer
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