Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond

• Published in: Diamond and related materials Vol. 47; pp. 15 - 26
• Main Authors: Gaubas, E., Ceponis, T., Jasiunas, A., Kalendra, V., Pavlov, J., Kazuchits, N., Naumchik, E., Rusetsky, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-08-2014; Elsevier
• Subjects: Catalysis; Catalysts: preparations and properties; Channels; Chemistry; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Correlation; Cross-disciplinary physics: materials science; rheology; Crystal defects; Defect characterization; Diamond crystal; Diamonds; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; General and physical chemistry; HTHP; Impurities; Impurity characterization; Materials science; Microstructure; Nickel; Nitrogen atoms; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoconduction and photovoltaic effects; photodielectric effects; Photoluminescence; Physics; Specific materials; Synthetic diamond; Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry; Wafers; Diamond crystal; Defect characterization; Impurity characterization; Microstructure; HTHP; Synthetic diamond; Atomic position; Non radiative recombination; Photoluminescence; Precipitate; Time resolved spectra; Single crystal; Absorption spectrum; Transients; High pressure high temperature method; Pressure effect; Carrier lifetime; Nickel; Photoconductivity; Catalyst; Defect formation; Wafer
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2014.05.003

The profiling of the microwave probed photoconductivity transients and of the time resolved photoluminescence spectra has simultaneously been performed on the synthetic diamond wafer samples in order to clarify correlation of the distribution of the grown-in defects and carrier radiative and non-radiative recombination channels. The wafer samples were sliced from the diamond single crystals, synthesized by the high pressure and high temperature (HPHT) technology using the Ni–Fe liquid solvent/catalyst system. To estimate the microscopic characteristics of the grown-in defects, the EPR spectroscopy has been carried out. The changes of carrier lifetime, ascribed to the radiative and non-radiative recombination, have been resolved. The correlation between the parameters extracted from the absorption spectra and recombination characteristics has been obtained. The prevailing grown-in point defects, associated with neutral and charged nitrogen impurity complexes as well as the pairs of nitrogen atoms on neighbouring sites, and the nickel precipitates have been unveiled.
•Diamond single crystals synthesized by HPHT technology were examined.•Profiling of photoconductivity transients and time resolved photoluminescence was made.•EPR, FTIR spectroscopy and microscopy imaging have been combined.•Nitrogen defects and nickel precipitates are related to recombination parameters.•Changes of radiative and non-radiative recombination lifetime have been resolved.