Steady-state and transient analysis of submicron devices using energy balance and simplified hydrodynamic models

• Published in: IEEE transactions on computer-aided design of integrated circuits and systems Vol. 13; no. 6; pp. 702 - 711
• Main Authors: Apanovich, Y., Lyumkis, E., Polsky, B., Shur, A., Blakey, P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-06-1994; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Computational modeling; Design. Technologies. Operation analysis. Testing; Differential equations; Electron mobility; Electronics; Exact sciences and technology; Integrated circuits; Mathematical model; Partial differential equations; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Steady-state; Temperature dependence; Temperature distribution; Thermal conductivity; Transient analysis; Energy balance; Transient response; Energy transport; Integrated circuit; Theoretical study; Hydrodynamic model; Numerical simulation; Modeling; Steady state solution; Computer aided design; Comparative study
• ISSN: 0278-0070; 1937-4151
• DOI: 10.1109/43.285243

The differences between two widely used intermediate-level charge transport models are investigated. The origins of the models are reviewed, and mathematical relationships between the models are established. The practical consequences of the differences are investigated by comparing results obtained for several submicron structures. The predictions of the two models are shown to differ qualitatively, as well as quantitatively, for certain situations. An appendix summarizes the numerical techniques used to implement the models in a device simulator.< >