An integrated heterojunction bipolar transistor cascode opto-electronic mixer

An integrated electrically pumped opto-electronic mixer consisting of two InP-GaInAs heterojunction bipolar transistors in a cascode configuration is demonstrated. Intrinsic down-conversion gains of 18.2 and 8.9 dB at RF optical modulation frequencies of 3 and 9.5 GHz were obtained. The performance...

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Bibliographic Details

Published in:	IEEE transactions on microwave theory and techniques Vol. 47; no. 7; pp. 1358 - 1364
Main Authors:	Betser, Y., Lasri, J., Sidorov, V., Cohen, S., Ritter, D., Orentstein, M., Eisentstein, G., Seeds, A.J., Madjar, A.
Format:	Journal Article
Language:	English
Published:	IEEE 01-07-1999
Subjects:	Epitaxial layers Equivalent circuits Frequency Gain Heterojunction bipolar transistors Indium phosphide Mixers Nonlinear optics Nonlinearity Optical mixing Optical pumping Optical sensors Optoelectronics Semiconductor devices Simulation
Online Access:	Get full text
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