Influence of ion-implantation on native oxidation of Si in a clean-room atmosphere

• Published in: Applied surface science Vol. 100; pp. 138 - 142
• Main Authors: Yano, Fumiko, Hiraoka, Akiko, Itoga, Toshihiko, Kojima, Hisao, Kanehori, Keiichi, Mitsui, Yasuhiro
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-07-1996
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(96)00274-7

We investigated the native oxidation of ion-implanted Si(100) surfaces in anticipation of a future necessity for controlling native oxidation during semiconductor device fabrication. Quantitative analysis of XPS spectra was used to estimate SiO
2 and SiO
x
thicknesses. Native oxidation of Si(100) wafers in which were implanted with As, P, B or Si was examined. The results show that oxidation of As or P-implanted Si is much faster than that of Si without implantation, however, no conclusive difference was found between the oxidation rates of B or Si-implanted Si and that of Si without implantation. These results indicate that native oxidation is influenced mainly by the species of implanted ions. Neither ion-implantation induced defects nor surface roughness was found to have major effect on the native oxidation rate.