Optical bandwidth considerations in p-i-n multiple quantum-well modulators

• Published in: Journal of lightwave technology Vol. 13; no. 3; pp. 461 - 464
• Main Authors: Goossen, K.W., Cunningham, J.E., Jan, W.Y.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-03-1995; Institute of Electrical and Electronics Engineers
• Subjects: Absorption; Applied sciences; Bandwidth; Circuit properties; Electric, optical and optoelectronic circuits; Electronics; Energy gap; Etching; Exact sciences and technology; Excitons; Gallium arsenide; High speed optical techniques; Integrated optics. Optical fibers and wave guides; Light absorption; Light modulation; Optical and optoelectronic circuits; Optical modulation; Optical superlattices; PIN photodiodes; Quantum well devices; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor quantum wells; Temperature; Temperature distribution; Integrated optics; Circuit design; Optical telecommunication; Network analysis; Optical modulator; Multiple quantum well; Passband; p i n diode
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/50.372443

We investigate the optical bandwidth of p-i(multiple quantum well [MQW])-n modulators employing various MQW designs. The optical bandwidth translates directly into an operating temperature range due to the shift of the band gap with temperature. We find that although greater maximum modulation may be obtained with narrow (/spl sim/90 /spl Aring/) quantum wells operating below the band edge (absorption increases with field), uniform large performance may be obtained over a larger bandwidth using wider (/spl sim/110 /spl Aring/) quantum wells operating at the exciton (absorption decreases with field). We obtain a usable bandwidth of 7.7 nm, which translates into a operating temperature range of 27/spl deg/C.< >