Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

•Demonstrations of high-resolution core-level photoelectron spectra of the untreated, atomically clean GaAs(111)A-2×2, GaAs(001)-4×6, and GaAs(001)-2×4 using synchrotron radiation as a probe.•Demonstration of the interfacial electronic structure of the high k dielectrics on the clean GaAs surfaces p...

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Bibliographic Details
Published in:	Applied surface science Vol. 284; pp. 601 - 610
Main Authors:	Pi, T.W., Lin, H.Y., Chiang, T.H., Liu, Y.T., Chang, Y.C., Lin, T.D., Wertheim, G.K., Kwo, J., Hong, M.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-11-2013 Elsevier
Subjects:	Atomic layer deposition Charge Chemical bonds Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Deposition Dimers Exact sciences and technology GaAs Gallium arsenide Gallium arsenides High K Physics Precursors Reconstruction Synchrotron radiation photoemission Trimethylaluminum High K Trimethylaluminum Atomic layer deposition GaAs Synchrotron radiation photoemission Water Gallium arsenides Inorganic compounds Semiconductor materials Binary compounds Core levels Monocrystals Photoemission Synchrotron radiation
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