(Al,Ga)Sb long-wavelength distributed Bragg reflectors

• Published in: IEEE photonics technology letters Vol. 5; no. 12; pp. 1376 - 1379
• Main Authors: Tuttle, G., Kavanaugh, J., McCalmont, S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-12-1993; Institute of Electrical and Electronics Engineers
• Subjects: Distributed Bragg reflectors; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Gallium arsenide; Mirrors; Molecular beam epitaxial growth; Optical elements, devices, and systems; Optical surface waves; Optics; Physics; Reflectivity; Reflectors, beam splitters, and deflectors; Refractive index; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers; Fabrication; Reflectors; Inorganic compounds; Gallium antimonides; Semiconductor lasers; Semiconductor materials; Distributed Bragg reflection; Optical telecommunication; Molecular beam epitaxy; Optics; Aluminium antimonides; Experimental study
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.262546

The authors have grown long-wavelength distributed Bragg reflectors (DBRs), using alternating layers of the semiconductors AlSb and (Al,Ga)Sb, and measured their properties. The large refractive index ratio available with these materials allows for high-reflectivity mirrors with relative few mirror pairs. A simple 10-period AlSb/GaSb DBR had a maximum reflectivity of over 98% at a wavelength of 1.92 mu m, and a 12-period Al/sub 0.2/Ga/sub 0.8/Sb/AlSb DBR exhibited reflectance greater than 99% at 1.38 mu m. These structures are easily grown by molecular beam epitaxy (MBE) and are suitable for use in surface-normal photonic devices operating at long wavelengths.< >