Optoelectronic generation and modulation of millimeter waves in a single InP-GaInAs photo heterojunction bipolar transistor

• Published in: IEEE photonics technology letters Vol. 12; no. 9; pp. 1240 - 1242
• Main Authors: Bilenca, A., Lasri, J., Eisenstein, G., Ritter, D., Sidorov, V., Cohen, S., Goldgeier, P., Orenstein, M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-09-2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bit error rate; Carriers; Digital modulation; Electrodes; Heterojunction bipolar transistors; Linearity; Millimeter wave transistors; Millimeter waves; Modulation; Optical mixing; Optical modulation; Optoelectronics; Semiconductor devices; Signal generators; Transducers
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.874248

We demonstrate the use of an InP-GaInAs photo heterojunction bipolar transistor as a millimeter wave transducer. A 45-GHz carrier signal is generated by mixing two optical signals impinging on the optical port at the base. Simultaneously, the base electrode is fed by an electrical signal which modulates the 45 GHz carrier. Analog modulation capabilities were characterized in terms of the modulation depth and linearity while digital modulation was evaluated by a measurement of bit error rates.