Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates

• Published in: IEEE transactions on nuclear science Vol. 47; no. 6; pp. 2669 - 2674
• Main Authors: Marshall, P.W., Carts, M.A., Campbell, A., McMorrow, D., Buchner, S., Stewart, R., Randall, B., Gilbert, B., Reed, R.A.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuit testing; Circuits; Clocks; Gallium arsenide; Germanium silicon alloys; Hardening; Heterojunction bipolar transistors; Indication; Laboratories; Logic; Logic circuits; Logic devices; Pulsed lasers; Silicon germanides; Silicon germanium; Single Event Effects; Single event upset
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.903824

This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology, Characterization over data rate up to 3 Gbps and over a broad range of heavy ion LETs provides important clues to upset mechanisms and implications for upset rate predictions. We augment ion test data with pulsed laser SEE testing to indicate the sensitive targets within the circuit and to provide insights into the upset mechanism(s),.