Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373 K

In this paper, thermal properties of phosphorus and boron-doped low pressure chemical vapor deposition (LPCVD) polysilicon layers with regard to sensor applications are presented. Thermoelectric coefficient and relative resistance variations of polysilicon are investigated within the temperature ran...

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 23; no. 3; pp. 139 - 141
Main Authors:	Boutchich, M., Ziouche, K., Godts, P., Leclercq, D.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-03-2002 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Boron Chemical sensors Chemical vapor deposition Coefficients Electric resistance Electrical resistivity Low pressure Optimization Phosphorus Sensor phenomena and characterization Sensors Temperature distribution Temperature sensors Thermal properties Thermal resistance Thermal sensors Thermoelectricity
Online Access:	Get full text
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