Growth of PbSe thin films on Si substrates by pulsed laser deposition method

• Published in: Journal of crystal growth Vol. 252; no. 1; pp. 230 - 235
• Main Authors: Rumianowski, Roman T., Dygdala, Roman S., Jung, Wojciech, Bala, Waclaw
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-2003; Elsevier
• Subjects: A1. Nanostructures; A3. Laser epitaxy; B1. Salts; B2. Semiconducting lead compounds; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; A3. Laser epitaxy; 52.50.Jm; A1. Nanostructures; 81.15.Fg; B1. Salts; B2. Semiconducting lead compounds; 52.38.Mf; Plasma physics; Inorganic compounds; Lead selenides; Operating mode; Polycrystals; Electronic mail; Crystal growth from vapors; Experimental study; Pulsed lasers; Crystal perfection; 52.18.Mf; B1. Silts; Characterization; Thin films; II-VI semiconductors; Heterojunctions; Fabrication structure relation; 52.50.Jm A1. Nanostructures; p-type conductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)02528-9

Fabrication of p-type PbSe thin films on (1
1
1) and (1
0
0)-oriented silicon substrates by the pulsed laser deposition method is demonstrated. The PbSe films were investigated by X-ray diffraction method, spectroscopic ellipsometry, electrical, scanning electron microscopy and SIMS methods. The time-of-flight mass spectra of cold pressed powders of Pb and Se are also investigated and are reported for the first time.