Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers

• Published in: IEEE photonics technology letters Vol. 12; no. 12; pp. 1598 - 1600
• Main Authors: Larson, M.C., Coldren, C.W., Spruytte, S.G., Petersen, H.E., Harris, J.S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Apertures; Density; Devices; Diodes; Distributed Bragg reflectors; Etching; Fiber lasers; Gallium arsenide; Holes; Lasers; Mirrors; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Threshold currents; Vertical cavity surface emitting lasers; Wavelengths
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.896319

We report, for the first time, room temperature continuous-wave (CW) operation of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a wavelength of 1.2 μm and grown all-epitaxially in a single step on a GaAs substrate. Oxide-apertured devices demonstrated CW threshold currents as low as 1 mA, slope efficiency above 0.045 W/A, and thermal impedance of 1.24 K/mW. Larger sized devices exhibited a pulsed threshold current density of 2-2.5 kA/cm 2 and slope efficiency above 0.09 W/A.