Consistent model for short-channel nMOSFET after hard gate oxide breakdown

• Published in: IEEE transactions on electron devices Vol. 49; no. 3; pp. 507 - 513
• Main Authors: Kaczer, B., Degraeve, R., De Keersgieter, A., Van de Mieroop, K., Simons, V., Groeseneken, G.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-03-2002; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Breakdown; Computer simulation; Devices; Equivalent circuits; Gates (circuits); Mathematical models; MOSFETs; Oxides; Silicon substrates
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.987123

Dissimilar post-hard-breakdown nMOSFET characteristics are consistently explained by the location of a constant-size breakdown path. Device simulations with the breakdown path modeled as a narrow inclusion of highly doped n-type silicon well reproduce all postbreakdown nFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. An equivalent circuit describing the gate current in an nFET after hard gate-oxide breakdown is proposed.