The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors

• Published in: IEEE electron device letters Vol. 13; no. 3; pp. 140 - 142
• Main Authors: Hafizi, M., Metzger, R.A., Stanchina, W.E., Rensch, D.B., Jensen, J.F., Hooper, W.W.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-03-1992; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Bismuth; Doping; Electronics; Exact sciences and technology; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; P-n junctions; Photonic band gap; Radio frequency; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Breakdown voltage; Gallium Indium Arsenides Mixed; Molecular diffusion; Performance characteristic; Doping; Heterojunction transistor; Indium Aluminium Arsenides; Bipolar technology; Experimental study; Radiofrequency; Current gain
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.144990

The effects of base p-dopant diffusion at junction interfaces of InGaAs/InAlAs HBTs with thin base thicknesses and high base dopings are reported. It is shown that HBTs with compositionally graded emitter-based (E-B) junctions are very tolerant to base dopant outdiffusion into the E-B graded region. The RF performance is nearly unaffected by the diffusion, and the DC current gain and E-B junction breakdown voltages are improved with finite Be diffusion into the E-B graded region.< >