Epitaxial growth of Ni on Cu( [formula omitted]) with the assistance of O-surfactant and its magnetism compared to Ni/Cu( [formula omitted])

The growth of Ni films deposited on a reconstructed (√2×2√2)R45° O/Cu(0 0 1) is examined. It is shown that deposition of Ni changes the surface symmetry to c(2 × 2) and that oxygen always floats on the film surface. No NiO is formed. Surface roughness decreases and the growth mode is closer to ideal...

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Bibliographic Details
Published in:Surface science Vol. 531; no. 1; pp. 53 - 67
Main Authors: Nünthel, R, Gleitsmann, T, Poulopoulos, P, Scherz, A, Lindner, J, Kosubek, E, Litwinski, Ch, Li, Z, Wende, H, Baberschke, K, Stolbov, S, Rahman, T.S
Format: Journal Article
Language:English
Published: Lausanne Elsevier B.V 10-05-2003
Amsterdam Elsevier Science
New York, NY
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Summary:The growth of Ni films deposited on a reconstructed (√2×2√2)R45° O/Cu(0 0 1) is examined. It is shown that deposition of Ni changes the surface symmetry to c(2 × 2) and that oxygen always floats on the film surface. No NiO is formed. Surface roughness decreases and the growth mode is closer to ideal layer-by-layer, as compared to that of Ni/Cu(0 0 1) indicating a surfactant activity of oxygen. Furthermore, the critical thickness for dislocation formation is larger than that for Ni/Cu(0 0 1), which points to a less defective film structure. The improved growth patterns are accompanied by a shift of the spin reorientation transition from in- to out-of-film plane by about 5 monolayers. In the film plane, the easy axis of the magnetization switches from the [1 1 0] direction for Ni/Cu(0 0 1), to the [1 0 0] direction for Ni on preoxidized Cu. We attribute these characteristics to modifications of the film surface by the floating oxygen.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(03)00438-2