Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (> 1 nm/s) silicon nitride films

• Published in: Progress in photovoltaics Vol. 11; no. 2; pp. 125 - 130
• Main Authors: Hong, J., Kessels, W. M. M., van Assche, F. J. H., Rieffe, H. C., Soppe, W. J., Weeber, A. W., van de Sanden, M. C. M.
• Format: Journal Article
• Language: English
• Published: Chichester, UK John Wiley & Sons, Ltd 01-03-2003; Wiley
• Subjects: Applied sciences; bulk passivation; Energy; Exact sciences and technology; firing process; high-rate deposition; internal quantum efficiency; multicrystalline silicon; Natural energy; Photovoltaic conversion; silicon nitride; solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Measurement; Silicon solar cells; Manufacturing process; Silicon nitride; Quantum yield; Thermal plasma; Thermal stability; Passivation
• ISSN: 1062-7995; 1099-159X
• DOI: 10.1002/pip.468

Silicon nitride (a‐SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti‐reflection coatings for multicrystalline silicon (mc‐Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing‐through process of the a‐SiNx:H as deposited from NH3/SiH4 and N2/SiH4 plasmas. However, the a‐SiNx:H films deposited from N2/SiH4 show a lower passivation quality than those deposited from NH3/SiH4. This has been attributed to a poorer thermal stability of the films deposited from the N2/SiH4 plasma, resulting in structural changes within the film during the firing step. Copyright © 2002 John Wiley & Sons, Ltd.