High-voltage lateral RESURF MOSFETs on 4H-SiC

• Published in: IEEE electron device letters Vol. 21; no. 7; pp. 356 - 358
• Main Authors: Chatty, K., Banerjee, S., Chow, T.P., Gutmann, R.J.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-07-2000; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Contact; Contact resistance; Drains; Electric potential; Electric resistance; Electrical resistivity; Implants; MOS devices; MOSFET circuits; MOSFETs; Nitrogen; Phosphorus; Plasma sources; Silicon carbide; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.847379

High-voltage lateral RESURF MOSFETs have been fabricated on 4H-SiC with both nitrogen and phosphorus as source/drain and RESURF region implants. Blocking voltages as high as 1200 V and specific on-resistances of 4 /spl Omega/ cm/sup 2/ have been obtained, with the high on-resistance attributed to poor inversion layer mobility. Phosphorus is most appropriate for the source/drain implants due to low sheet resistance and contact resistance with low temperature anneals. However, poor activation of low dose phosphorus implants at 1200/spl deg/C makes nitrogen the preferred choice for the RESURF region.