ECWR-Plasma CVD as a novel technique for phase controlled deposition of semiconductor films

• Published in: Thin solid films Vol. 341; no. 1; pp. 101 - 104
• Main Authors: Oechsner, H., Scheib, M., Goebel, H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 12-03-1999; Elsevier Science
• Subjects: Amorphous and nanocrystalline hydrogenated Ge and Si films; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Electron cyclotron wave resonance; Exact sciences and technology; Film properties for photovoltaic applications; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Plasma assisted chemical vapour deposition; Film properties for photovoltaic applications; Plasma assisted chemical vapour deposition; Electron cyclotron wave resonance; Amorphous and nanocrystalline hydrogenated Ge and Si films; Semiconductor materials; Films; Electron cyclotron-resonance; Operating mode; Crystal growth from vapors; Experimental study; Nonmetals; Amorphous hydrogenated material; Chemical preparation; Germanium; Silicon; PECVD; Particle excitation; Nanocrystal
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(98)01547-8

Plasma excitation by electron cyclotron wave resonance (ECWR) as a rather novel technique for direct and remote PACVD processes is briefly described from its physical background. ECWR-plasmas operated in pure SiH
4 and GeH
4 have been employed for the production of amorphous and nanocrystalline hydrogenated Si and Ge films with favourable properties for photovoltaic applications.