Characterisation of porous doped ZnO thin films deposited by spray pyrolysis technique

Al or Sn doped ZnO films were deposited by spray pyrolysis using aqueous solutions. The films were deposited on either indium tin oxide coated or bare glass substrates. ZnCl 2, AlCl 3 and SnCl 2 were used as precursors. The effect of ZnCl 2 molar concentration (0.1–0.3 M) and doping percentage (2–4%...

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Published in:Applied surface science Vol. 253; no. 23; pp. 9241 - 9247
Main Authors: Allah, F. Kadi, Abé, S. Yapi, Núñez, C.M., Khelil, A., Cattin, L., Morsli, M., Bernède, J.C., Bougrine, A., del Valle, M.A., Díaz, F.R.
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 30-09-2007
Elsevier Science
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XRD
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Abstract Al or Sn doped ZnO films were deposited by spray pyrolysis using aqueous solutions. The films were deposited on either indium tin oxide coated or bare glass substrates. ZnCl 2, AlCl 3 and SnCl 2 were used as precursors. The effect of ZnCl 2 molar concentration (0.1–0.3 M) and doping percentage (2–4% AlCl 3 or SnCl 2) have been investigated. The main goal of this work being to grow porous ZnO thin films, small temperature substrates (200–300 °C) have been used during the spray pyrolysis deposition. It is shown that, if the X-ray diffraction patterns correspond to ZnO, the films deposited onto bare glass substrate are only partly crystallized while those deposited onto ITO coated glass substrate exhibit better crystallization. The homogeneity of the films decreases when the molar concentration of the precursor increases, while the grain size and the porosity decrease when the Al doping increases. The optical study shows that band tails are present in the absorption spectrum of the films deposited onto bare glass substrate, which is typical of disordered materials. Even after annealing 4 h at 400 °C, the longitudinal resistivity of the films is quite high. This result is attributed to the grain boundary effect and the porosity of the films. Effectively, the presence of an important reflection in the IR region in samples annealed testifies of a high free-carriers density in the ZnO crystallites. Finally it is shown that when deposited in the same electrochemical conditions, the transmission of a polymer film onto the rough sprayed ZnO is smaller than that onto smooth sputtered ZnO.
AbstractList Al or Sn doped ZnO films were deposited by spray pyrolysis using aqueous solutions. The films were deposited on either indium tin oxide coated or bare glass substrates. ZnCl 2, AlCl 3 and SnCl 2 were used as precursors. The effect of ZnCl 2 molar concentration (0.1–0.3 M) and doping percentage (2–4% AlCl 3 or SnCl 2) have been investigated. The main goal of this work being to grow porous ZnO thin films, small temperature substrates (200–300 °C) have been used during the spray pyrolysis deposition. It is shown that, if the X-ray diffraction patterns correspond to ZnO, the films deposited onto bare glass substrate are only partly crystallized while those deposited onto ITO coated glass substrate exhibit better crystallization. The homogeneity of the films decreases when the molar concentration of the precursor increases, while the grain size and the porosity decrease when the Al doping increases. The optical study shows that band tails are present in the absorption spectrum of the films deposited onto bare glass substrate, which is typical of disordered materials. Even after annealing 4 h at 400 °C, the longitudinal resistivity of the films is quite high. This result is attributed to the grain boundary effect and the porosity of the films. Effectively, the presence of an important reflection in the IR region in samples annealed testifies of a high free-carriers density in the ZnO crystallites. Finally it is shown that when deposited in the same electrochemical conditions, the transmission of a polymer film onto the rough sprayed ZnO is smaller than that onto smooth sputtered ZnO.
Al or Sn doped ZnO films were deposited by spray pyrolysis using aqueous solutions. The films were deposited on either indium tin oxide coated or bare glass substrates. ZnCl2, AlCl3 and SnCl2 were used as precursors. The effect of ZnCl2 molar concentration (0.1-0.3M) and doping percentage (2-4% AlCl3 or SnCl2) have been investigated. The main goal of this work being to grow porous ZnO thin films, small temperature substrates (200-300 deg C) have been used during the spray pyrolysis deposition. It is shown that, if the X-ray diffraction patterns correspond to ZnO, the films deposited onto bare glass substrate are only partly crystallized while those deposited onto ITO coated glass substrate exhibit better crystallization. The homogeneity of the films decreases when the molar concentration of the precursor increases, while the grain size and the porosity decrease when the Al doping increases. The optical study shows that band tails are present in the absorption spectrum of the films deposited onto bare glass substrate, which is typical of disordered materials. Even after annealing 4h at 400 deg C, the longitudinal resistivity of the films is quite high. This result is attributed to the grain boundary effect and the porosity of the films. Effectively, the presence of an important reflection in the IR region in samples annealed testifies of a high free-carriers density in the ZnO crystallites. Finally it is shown that when deposited in the same electrochemical conditions, the transmission of a polymer film onto the rough sprayed ZnO is smaller than that onto smooth sputtered ZnO.
Author Bougrine, A.
Abé, S. Yapi
Núñez, C.M.
Bernède, J.C.
Khelil, A.
Díaz, F.R.
Cattin, L.
Morsli, M.
Allah, F. Kadi
del Valle, M.A.
Author_xml – sequence: 1
  givenname: F. Kadi
  surname: Allah
  fullname: Allah, F. Kadi
  organization: Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, Nantes F-44000, France
– sequence: 2
  givenname: S. Yapi
  surname: Abé
  fullname: Abé, S. Yapi
  organization: Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, Nantes F-44000, France
– sequence: 3
  givenname: C.M.
  surname: Núñez
  fullname: Núñez, C.M.
  organization: Facultad de Química, Pontificia Universidad Católica de Chile PUCC, Vicuña Mackenna 4860, Santiago, Chile
– sequence: 4
  givenname: A.
  surname: Khelil
  fullname: Khelil, A.
  organization: Université d’Oran, Laboratoire de Physique des Couches Minces et Matériaux pour l’Electronique (LPCM2E), BP 1524 El Mnaouer Oran, Algeria
– sequence: 5
  givenname: L.
  surname: Cattin
  fullname: Cattin, L.
  organization: Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, Nantes F-44000, France
– sequence: 6
  givenname: M.
  surname: Morsli
  fullname: Morsli, M.
  organization: Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, Nantes F-44000, France
– sequence: 7
  givenname: J.C.
  surname: Bernède
  fullname: Bernède, J.C.
  email: Jean-Christian.Bernede@univ-nantes.fr
  organization: Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, Nantes F-44000, France
– sequence: 8
  givenname: A.
  surname: Bougrine
  fullname: Bougrine, A.
  organization: Université de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208, Nantes F-44000, France
– sequence: 9
  givenname: M.A.
  surname: del Valle
  fullname: del Valle, M.A.
  organization: Facultad de Química, Pontificia Universidad Católica de Chile PUCC, Vicuña Mackenna 4860, Santiago, Chile
– sequence: 10
  givenname: F.R.
  surname: Díaz
  fullname: Díaz, F.R.
  organization: Facultad de Química, Pontificia Universidad Católica de Chile PUCC, Vicuña Mackenna 4860, Santiago, Chile
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Issue 23
Keywords X-ray diffraction
Scanning electron microscopy
Zinc oxide
Optical and electrical properties
Spray pyrolysis
Grain boundaries
Disordered systems
Inorganic compounds
Electrical conductivity
Porous materials
XRD
Surface structure
Thin films
Aqueous solutions
Absorption spectra
Grain size
Pyrolysis
Annealing
Transition element compounds
Crystallization
Doped materials
Free carrier
Tin additions
Zinc oxides
Aluminium additions
Porosity
Carrier density
Language English
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Snippet Al or Sn doped ZnO films were deposited by spray pyrolysis using aqueous solutions. The films were deposited on either indium tin oxide coated or bare glass...
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SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Electrical properties of specific thin films
Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots)
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Optical and electrical properties
Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Scanning electron microscopy
Spray coating techniques
Spray pyrolysis
Structure and morphology; thickness
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
X-ray diffraction
Zinc oxide
Title Characterisation of porous doped ZnO thin films deposited by spray pyrolysis technique
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