Surface scattering frequency and optical absorptivity of exciton in quasi-two-dimensional quantum wells

• Published in: Solid state communications Vol. 119; no. 3; pp. 163 - 167
• Main Authors: Atenco-Analco, N., Makarov, N.M., Pérez-Rodrı́guez, F.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 17-07-2001; Elsevier
• Subjects: A. Disordered systems; A. Quantum wells; Condensed matter: electronic structure, electrical, magnetic, and optical properties; D. Optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Quantum wells; 71.35.−y; A. Quantum wells; 78.66.−w; 42.25.Dd; D. Optical properties; A. Disordered systems; Interfaces; Relaxation; Excitons; Line shape; Surface scattering; Quantum wells; Roughness; Self consistency; Theoretical study; Absorptivity; Absorption spectra; Green's function methods
• DOI: 10.1016/S0038-1098(01)00227-7
• EISSN: 1879-2766
• ISSN: 0038-1098

Applying the self-consistent Green's function method, we calculate and analyze the relaxation frequency
ν of exciton in a quasi-two-dimensional quantum well of arbitrary depth. The exciton relaxation results from the electron and hole scattering by the randomly rough well interfaces. It is shown that the introduced here
ν controls the behavior of the exciton absorptivity spectrum
A(
ω). We analyze the line-shape of the ground-state exciton resonance and reveal the criteria for the transition from asymmetric (sharp) to symmetric (broad) resonance. The dependencies of
ν and
A on the parameters of the exciton quantum well and its rough interfaces are found.