The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET

• Published in: Nuclear technology & radiation protection Vol. 33; no. 1; pp. 81 - 86
• Main Authors: Obrenovic, Marija, Pejovic, Milic, Lazarevic, Djordje, Kartalovic, Nenad
• Format: Journal Article
• Language: English
• Published: Belgrade Vinca Institute of Nuclear Sciences 01-01-2018; VINCA Institute of Nuclear Sciences
• Subjects: Bias; Dependence; gamma ray irradiation; Gamma rays; Radiation dosage; radiation dose; Radiation effects; Switching; Threshold voltage; threshold voltage shift; VDMOSFET
• ISSN: 1451-3994; 1452-8185
• DOI: 10.2298/NTRP1801081O

The variations in the threshold voltage shift in p-channel power VDMOSFET
during the gamma ray irradiation was investigated in the dose range from 10
to 100 Gy. The investigations were performed without the gate bias and with 5
V gate bias. The devices with 5 V gate bias exhibit a linear dependence
between the threshold voltage shift and the radiation dose. The densities of
radiation-induced fixed and switching traps were determined from the
sub-threshold I-V characteristics using the midgap technique. It was shown
that the creation of fixed traps is dominant during the irradiation. The
possible mechanisms responsible for the fixed and switching traps creation
are also analyzed in this paper.