Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide

• Published in: Microelectronic engineering Vol. 48; no. 1; pp. 379 - 382
• Main Authors: Nazarov, A.N., Barchuk, I.P., Lysenko, V.S., Colinge, J.-P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 1999; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; MOS technology; Silicon on insulator technology; Field effect transistor; Buried layer; Microelectronic fabrication; Experimental result; Voltage current curve; Oxide layer; n channel; High temperature
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(99)00410-4

A high-temperature drain current “jump” in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in the SIMOX SOI MOSFETs at temperatures above 200°C after a negative voltage is applied to the substrate. Direct link of the current “jump” with the positive charge formation in the buried oxide (BOX) has been demonstrated. The current “jump” or a front channel high-temperature kink-effect is explained by electron retrapping in the (BOX) in the vicinity of the BOX-silicon body interface.