Theoretical Study of Gallium Nitride Crystal Growth Reaction Mechanism

Theoretical Study of Gallium Nitride Crystal Growth Reaction Mechanism

In this work, we investigate GaN(0001) crystal growth focusing on gas-phase and surface reactions from the viewpoint of metalorganic chemical vapor deposition (MOCVD) by ab initio calculations. We consider the adsorption of compounds of Ga and N atoms on a Ga-covered surface cluster model. For the a...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 50; no. 12; pp. 125601 - 125601-7
Main Authors: Ikeda, Yuji, Ohmori, Norifumi, Maida, Noriaki, Senami, Masato, Tachibana, Akitomo
Format: Journal Article
Language:English
Published: The Japan Society of Applied Physics 01-12-2011
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Summary:In this work, we investigate GaN(0001) crystal growth focusing on gas-phase and surface reactions from the viewpoint of metalorganic chemical vapor deposition (MOCVD) by ab initio calculations. We consider the adsorption of compounds of Ga and N atoms on a Ga-covered surface cluster model. For the adsorption of these compounds, it is found that Ga--Ga bonds undesirable for the steady growth appear for alkylgallium with amino group, and the compounds which have coordinate bonds with NH 3 can be a solution for this problem, since they do not make Ga--Ga bonds.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.125601