GaAs surface oxide desorption by annealing in ultra high vacuum

We have studied the desorption mechanism of Ga- and As-oxides on GaAs (100) by subjecting the substrates to two thermal processes in ultra high vacuum (UHV) conditions. The first process was an outgassing at 350°C, and the second process consisted of an annealing at 530°C. The pressure variations in...

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Bibliographic Details
Published in:	Thin solid films Vol. 373; no. 1; pp. 159 - 163
Main Authors:	Guillén-Cervantes, A, Rivera-Alvarez, Z, López-López, M, López-Luna, E, Hernández-Calderón, I
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Lausanne Elsevier B.V 03-09-2000 Elsevier Science
Subjects:	Applied sciences Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Gallium arsenide Materials science Microelectronic fabrication (materials and surfaces technology) Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Oxides Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface cleaning, etching, patterning Surface morphology Surface treatments Thermal desorption Oxides Thermal desorption Gallium arsenide Surface morphology Surface cleaning Gallium arsenides Inorganic compounds Roughness Surfaces Surface treatments Desorption Experimental study Heat treatments Native state Substrates Microelectronic fabrication Wafers Reaction mechanism Ultrahigh vacuum III-V semiconductors
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