Bi induced superstructures on Si(110)

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 34; no. 5
• Main Authors: Ang, Artoni Kevin R., Takeda, Sakura Nishino, Daimon, Hiroshi
• Format: Journal Article
• Language: English
• Published: 01-09-2016
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/1.4958803

The authors report new surface reconstructions that are produced when Bi is adsorbed on Si(110) surfaces held at high substrate temperatures. At 600 °C and a Bi coverage of 0.1 ML, reflection high energy electron diffraction (RHEED) patterns reveal the formation of a
3
×
″
4
″
-Bi structure with b
1 = 3a
1 and
b
2
=
−
a
1
+
4
a
2
. At 630 °C and 0.2 ML Bi coverage, a
3
×
″
6
″
-Bi structure is observed, with
b
1
=
3
a
1
and
b
2
=
−
a
1
+
6
a
2
. The coexistence of streaks and spots in the RHEED patterns of the
3
×
″
4
″
and
3
×
″
6
″
structures indicate a high density of antiphase domains, with poor structural correlation along the
[
001
]
direction. The authors propose structural models based on rows of Bi adatoms aligned along the
[
1
¯
10
]
direction. The models proposed can also be applied to similar reconstructions on Si(110) adsorbed with other metals.