Growth of high-quality ZnO nanowires without a catalyst

In this study, an efficient method to achieve a wide range of high-quality zinc oxide (ZnO) nanostructures through zinc powder evaporation at lower temperatures is developed. ZnO nanowires could be synthesized on n-type silicon substrates by a simple thermal-evaporation technique without a catalyst...

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Bibliographic Details
Published in:Physica. B, Condensed matter Vol. 405; no. 19; pp. 4216 - 4218
Main Authors: Abdulgafour, H.I., Hassan, Z., Al-Hardan, N.H., Yam, F.K.
Format: Journal Article
Language:English
Published: Kidlington Elsevier B.V 01-10-2010
Elsevier
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Summary:In this study, an efficient method to achieve a wide range of high-quality zinc oxide (ZnO) nanostructures through zinc powder evaporation at lower temperatures is developed. ZnO nanowires could be synthesized on n-type silicon substrates by a simple thermal-evaporation technique without a catalyst at 550, 600, and 650 °C. Samples are annealed in wet oxygen and ambient argon gases. Surface morphology, crystallinity, and optical properties of the ZnO nanowires are examined by scanning electron microscopy, X-ray diffraction, and photoluminescence measurement. The optimum temperature for synthesizing high-density, long ZnO nanowires was determined as 650 °C. The possible growth mechanism of ZnO nanowires is also proposed.
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content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2010.07.013