Growth of high-quality ZnO nanowires without a catalyst
In this study, an efficient method to achieve a wide range of high-quality zinc oxide (ZnO) nanostructures through zinc powder evaporation at lower temperatures is developed. ZnO nanowires could be synthesized on n-type silicon substrates by a simple thermal-evaporation technique without a catalyst...
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Published in: | Physica. B, Condensed matter Vol. 405; no. 19; pp. 4216 - 4218 |
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Main Authors: | , , , |
Format: | Journal Article |
Language: | English |
Published: |
Kidlington
Elsevier B.V
01-10-2010
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | In this study, an efficient method to achieve a wide range of high-quality zinc oxide (ZnO) nanostructures through zinc powder evaporation at lower temperatures is developed. ZnO nanowires could be synthesized on n-type silicon substrates by a simple thermal-evaporation technique without a catalyst at 550, 600, and 650
°C. Samples are annealed in wet oxygen and ambient argon gases. Surface morphology, crystallinity, and optical properties of the ZnO nanowires are examined by scanning electron microscopy, X-ray diffraction, and photoluminescence measurement. The optimum temperature for synthesizing high-density, long ZnO nanowires was determined as 650
°C. The possible growth mechanism of ZnO nanowires is also proposed. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2010.07.013 |