Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes

• Published in: Journal of crystal growth Vol. 311; no. 3; pp. 863 - 866
• Main Authors: CHOI, E. S, DOAN, M. H, NGUYEN, H. P. T, KIM, S, LIM, H, ROTERMUND, F, LEE, J. J
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 15-01-2009
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron and ion emission by liquids and solids; impact phenomena; Electronics; Exact sciences and technology; Field emission, ionization, evaporation, and desorption; Fundamental areas of phenomenology (including applications); Optical materials; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Optics; Optoelectronic devices; Photonic bandgap materials; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; A3. Quantum wells; Bl. Nitrides; Electron beam lithography; Luminescence; Field emission; 81.07.Vb; B2. Semiconducting III-V materials; Ambient temperature; Optical properties; 81.16.Nd; Indium nitride; Square lattices; Crystal structure; Scanning electron microscopy; Dry etching; Quantum wells; Photonic crystals; Light emitting diodes; Optoelectronic devices; MOCVD; Inductively coupled plasma; A3. Metalorganic chemical vapor deposition; Arrays; Green light; Nanostructured materials; Spatial resolution; III-V semiconductors
• DOI: 10.1016/j.jcrysgro.2008.09.103
• EISSN: 1873-5002
• ISSN: 0022-0248

We report on the enhancement of cathode-luminescence in InxGa1-xN/InyGa1-yN green light emitting diode structure using two-dimensional photonic crystal. The square lattice arrays of photonic crystals with nominal diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 175, 95, and 65 nm, were fabricated and studied. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with truncated-inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurements showed that up to about 28-fold enhancement of luminescence intensity has been obtained at room temperature. Spatially resolved luminescence profile around the single hole, which composes photonic crystal structure, was also obtained by cathode-luminescence measurements.