Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements

The non-linear dependence of photoconductivity (PC) on wavelength and intensity of illumination was used to evaluate the lifetime and quantum efficiency coefficient of carrier photogeneration in RF sputtered thin films of a-Si:H. The change of spatial distribution of radiation intensity over the sam...

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Bibliographic Details
Published in:	Thin solid films Vol. 283; no. 1; pp. 75 - 80
Main Authors:	Grabowski, A, Nowak, M, Tzanetakis, P
Format:	Journal Article
Language:	English
Published:	Lausanne Elsevier B.V 01-09-1996 Elsevier Science
Subjects:	Amorphous silicon Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Elemental semiconductors and insulators Exact sciences and technology Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Optical properties of specific thin films Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects; photodielectric effects Photoconductivity Physics Semiconductors Amorphous silicon Semiconductors Photoconductivity Optical properties Thin films Recombination Quantum efficiency Semiconductor materials Photogeneration Hydrogen additions Illumination Silicon Amorphous state Experimental study Optical absorption
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